Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 12.3 A
Technical parameters/drain source resistance: 8.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 900mW (Ta)
Technical parameters/input capacitance: 1.28 nF
Technical parameters/gate charge: 15.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 12.3 A
Technical parameters/Input capacitance (Ciss): 1280pF @24V(Vds)
Technical parameters/dissipated power (Max): 900mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerTDFN-8
External dimensions/packaging: PowerTDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMFS4701NT3G
|
ON Semiconductor | 完全替代 | PowerTDFN-8 |
功率MOSFET的30 V ， 20 A单N沟道， SOIC - 8扁平引脚封装 Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package
|
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