Technical parameters/power supply voltage (DC): 4.75V (min)
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 1 W
Technical parameters/rise time: 30 ns
Technical Parameters/Drivers/Packages: 2
Technical parameters/descent time: 30 ns
Technical parameters/descent time (Max): 30 ns
Technical parameters/rise time (Max): 30 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage (Max): 24 V
Technical parameters/power supply voltage (Min): 4.75 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/length: 9.81 mm
External dimensions/width: 6.35 mm
External dimensions/height: 4.57 mm
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SN75372P
|
TI | 类似代替 | DIP-8 |
TEXAS INSTRUMENTS SN75372P 双路驱动器芯片, MOSFET, 低压侧, 4.75V-24V电源, 500mA输出, 30ns延迟, DIP-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review