Technical parameters/power supply voltage (DC): 2.00V ~ 6.00V
Technical parameters/output current: 5.20 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 8
Technical parameters/digits: 8
Technical parameters/transmission delay time: 28.0 ns
Technical Parameters/Voltage Wave Node: 6.00 V, 5.00 V, 2.00 V
Technical parameters/output current drive: -1.00 mA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/power supply voltage (Max): 6 V
Technical parameters/power supply voltage (Min): 2 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 9.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-16
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SN74HC259D
|
TI | 类似代替 | SOIC-16 |
TEXAS INSTRUMENTS SN74HC259D 芯片, 8位地址锁存器
|
||
SN74HC259DR
|
TI | 类似代替 | SOIC-16 |
TEXAS INSTRUMENTS SN74HC259DR 芯片, 可寻址锁存器, 8位, SOIC-16
|
||
SN74HC259DR
|
TI | 类似代替 | SOIC-16 |
TEXAS INSTRUMENTS SN74HC259DR 芯片, 可寻址锁存器, 8位, SOIC-16
|
||
SN74HC259DT
|
TI | 类似代替 | SOIC-16 |
TEXAS INSTRUMENTS SN74HC259DT 逻辑芯片, 可寻址锁存器, 8位,16SOIC
|
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