Technical parameters/frequency: 2.00 GHz
Technical parameters/power supply voltage (DC): 3.00V (min)
Technical parameters/number of output interfaces: 2
Technical parameters/power supply current: 20.0 mA
Technical parameters/number of circuits: 1
Technical parameters/dissipated power: 0.84 W
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 840 mW
Technical parameters/power supply voltage: 3V ~ 3.8V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: 5A991.b.1
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
100LVEL11MX
|
Fairchild | 类似代替 | SOIC-8 |
Clock Buffer 4Out 8Pin SOIC N T/R
|
||
|
|
NXP | 类似代替 | TSSOP |
MC100LVEL11 系列 1 GHz 3.8 V ECL 1:2 差分 扇出缓冲器 - TSSOP-8
|
||
MC100LVEL11DTR2G
|
ON Semiconductor | 类似代替 | TSSOP-8 |
MC100LVEL11 系列 1 GHz 3.8 V ECL 1:2 差分 扇出缓冲器 - TSSOP-8
|
||
|
|
Motorola | 类似代替 |
MC100LVEL11 系列 1 GHz 3.8 V ECL 1:2 差分 扇出缓冲器 - TSSOP-8
|
|||
SN65LVEL11DR
|
TI | 完全替代 | SOIC-8 |
3.3 V ECL 1 : 2扇出缓冲器 3.3 V ECL 1:2 Fanout Buffer
|
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