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Technical parameters/power supply voltage (DC): 3.00V (min)
Technical parameters/output current: 12.0 µA
Technical parameters/power supply current: 25 mA
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 377 mW
Technical parameters/input capacitance: .6 pF
Technical parameters/input voltage (Max): 0.1 V
Technical parameters/input voltage (Min): 0.1 V
Technical parameters/output voltage (Max): 0.454 V
Technical parameters/input current (Min): 66 μA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 377 mW
Technical parameters/power supply voltage: 3V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: VSSOP-8
External dimensions/length: 3 mm
External dimensions/width: 3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: VSSOP-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: -
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SN65LVDS100DGK
|
TI | 类似代替 | MSOP-8 |
TEXAS INSTRUMENTS SN65LVDS100DGK. 芯片, 电平变换器
|
||
SN65LVDT101DGK
|
TI | 类似代替 | MSOP-8 |
TEXAS INSTRUMENTS SN65LVDT101DGK 芯片, 差分中继器, 2GBPS, MSOP8
|
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