Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated power: 200 W
Technical parameters/breakdown voltage: 13.3 V
Technical parameters/dissipated power: 1 kW
Technical parameters/clamp voltage: 19.9 V
Technical parameters/peak pulse power: 200 W
Technical parameters/minimum reverse breakdown voltage: 13.3 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-123FL
External dimensions/length: 2.90 mm
External dimensions/width: 1.80 mm
External dimensions/height: 1.00 mm
External dimensions/packaging: SOD-123FL
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMF12A-GS08
|
Vishay Semiconductor | 功能相似 | DO-219AB |
1 KW 19.9 V 单向 表面贴装 瞬态电压抑制二极管 -DO-219AB
|
||
SMF12AT1G
|
ON Semiconductor | 类似代替 | SOD-123FL |
200W 瞬态电压抑制器 SOD-123 扁平引线封装 ### 瞬态电压抑制器,On Semiconductor
|
||
SMF12AT1G
|
Littelfuse | 类似代替 | SOD-123FL |
200W 瞬态电压抑制器 SOD-123 扁平引线封装 ### 瞬态电压抑制器,On Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review