Technical parameters/breakdown voltage: 12.2 V
Technical parameters/dissipated power: 3 kW
Technical parameters/clamp voltage: 18.2 V
Technical parameters/peak pulse power: 3000 W
Technical parameters/minimum reverse breakdown voltage: 11.57 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
3.0SMCJ11
|
Sensitron Semiconductor | 功能相似 | DO-214AB |
Trans Voltage Suppressor Diode, 3000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMC, 2 PIN
|
||
3KASMC11-E3/57T
|
Vishay Semiconductor | 功能相似 | DO-214AB-2 |
ESD 抑制器/TVS 二极管 RECOMMENDED ALT 78-3KASMC11AHE3_B/H
|
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