Technical parameters/breakdown voltage: 14 V|13.3 V
Technical parameters/number of circuits: 1
Technical parameters/number of pins: 2
Technical parameters/dissipated power: 3 kW
Technical parameters/clamp voltage: 19.9 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 14.7 V
Technical parameters/peak pulse power: 3000 W
Technical parameters/minimum reverse breakdown voltage: 13.3 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: -65℃ ~ 150℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/length: 8.13 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.62 mm
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMCJ12A-E3/57T
|
Vishay Semiconductor | 功能相似 | DO-214AB |
TRANSZORB® 瞬态电压抑制器表面安装单向 1500W，SMCJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
||
SMCJ12A-E3/57T
|
VISHAY | 功能相似 | DO-214AB |
TRANSZORB® 瞬态电压抑制器表面安装单向 1500W，SMCJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
||
SMCJ12A-E3/57T
|
Vishay Intertechnology | 功能相似 |
TRANSZORB® 瞬态电压抑制器表面安装单向 1500W，SMCJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
|||
SMDJ12A-HRA
|
Littelfuse | 完全替代 | DO-214AB |
单向 12V 3000W
|
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