Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 64.4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMCJ58A-E3/57T
|
Vishay Semiconductor | 类似代替 | DO-214AB |
VISHAY SMCJ58A-E3/57T TVS二极管, TVS, AEC-Q101 TRANSZORB SMCJ系列, 单向, 58 V, 93 V, DO-214AB, 2 引脚
|
||
SMCJ58A-E3/57T
|
VISHAY | 类似代替 | DO-214AB |
VISHAY SMCJ58A-E3/57T TVS二极管, TVS, AEC-Q101 TRANSZORB SMCJ系列, 单向, 58 V, 93 V, DO-214AB, 2 引脚
|
||
SMCJ58A-E3/57T
|
Vishay Intertechnology | 类似代替 |
VISHAY SMCJ58A-E3/57T TVS二极管, TVS, AEC-Q101 TRANSZORB SMCJ系列, 单向, 58 V, 93 V, DO-214AB, 2 引脚
|
|||
SMCJ58A-E3/9AT
|
VISHAY | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 58V 1.5kW 2Pin SMC T/R
|
||
SMCJ58A-E3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 58V 1.5kW 2Pin SMC T/R
|
||
SMCJ58AHE3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 58V 1.5kW 2Pin SMC T/R
|
||
SMCJ58AHE3/9AT
|
VISHAY | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 58V 1.5kW 2Pin SMC T/R
|
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