Technical parameters/clamp voltage: 18.2 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 12.2 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AB-2
External dimensions/packaging: DO-214AB-2
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMCJ11CAHE3/57T
|
Vishay Semiconductor | 完全替代 | DO-214AB-2 |
ESD 抑制器/TVS 二极管 1.5KW 11V 5% Bidir AEC-Q101 Qualified
|
||
SMCJ11CAHE3/57T
|
VISHAY | 完全替代 | DO-214AB |
ESD 抑制器/TVS 二极管 1.5KW 11V 5% Bidir AEC-Q101 Qualified
|
||
SMCJ11CAHE3/9AT
|
VISHAY | 完全替代 | DO-214AB |
ESD 抑制器/TVS 二极管 1.5KW 11V 5% Bidir AEC-Q101 Qualified
|
||
SMCJ11CAHE3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB-2 |
ESD 抑制器/TVS 二极管 1.5KW 11V 5% Bidir AEC-Q101 Qualified
|
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