Technical parameters/working voltage: 7.5 V
Technical parameters/breakdown voltage: 8.33 V
Technical parameters/dissipated power: 1 W
Technical parameters/clamp voltage: 14.3 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 8.33 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ7.5CA-E3/5B
|
VISHAY | 功能相似 | SMB-214 |
Diode TVS Single Bi-Dir 7.5V 600W 2Pin SMB T/R
|
||
SMBJ7.5CA-E3/5B
|
Vishay Semiconductor | 功能相似 | DO-214 |
Diode TVS Single Bi-Dir 7.5V 600W 2Pin SMB T/R
|
||
SMBJ7.5CAHE3/52
|
VISHAY | 功能相似 | DO-214AA |
Diode TVS Single Bi-Dir 7.5V 600W 2Pin SMB T/R
|
||
SMBJ7.5CAHE3/52
|
Vishay Semiconductor | 功能相似 | DO-214AA |
Diode TVS Single Bi-Dir 7.5V 600W 2Pin SMB T/R
|
||
SMBJ7V5CA
|
ON Semiconductor | 功能相似 | DO-214AA |
Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
|
||
SMBJ7V5CA
|
Fairchild | 功能相似 | DO-214AA |
Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
|
||
|
|
Taiwan Semiconductor | 功能相似 | SMB |
Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
|
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