Technical parameters/working voltage: 75 V
Technical parameters/breakdown voltage: 90.8 V
Technical parameters/dissipated power: 1 W
Technical parameters/clamp voltage: 119 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 84.6 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ75D-M3/H
|
Vishay Semiconductor | 类似代替 | DO-214AA-2 |
ESD 抑制器/TVS 二极管 75V 600W UniDir TransZorb 3.5% Tol
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review