Technical parameters/number of pins: 2
Technical parameters/dissipated power: 600 W
Technical parameters/clamp voltage: 53.3 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 40.6 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 36.7 V
Technical parameters/breakdown voltage: 36.7 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -65℃ ~ 150℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/length: 4.75 mm
External dimensions/width: 3.95 mm
External dimensions/height: 2.45 mm
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Consumer electronics, safety, power management, industrial, portable devices
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ33A-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W，SMBJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
||
SMBJ33A-E3/52
|
Vishay Intertechnology | 完全替代 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W，SMBJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
|||
SMBJ33A-E3/5B
|
Vishay Dale | 完全替代 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W，SMBJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
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