Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 133 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ120CA-E3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 120V 600W 2Pin SMB T/R
|
||
SMBJ120CAHE3/52
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 120V 600W 2Pin SMB T/R
|
||
SMBJ120CAHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 120V 600W 2Pin SMB T/R
|
||
SMBJ120CAHE3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 120V 600W 2Pin SMB T/R
|
||
SMBJ120CAHE3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 120V 600W 2Pin SMB T/R
|
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