Technical parameters/working voltage: 8 V
Technical parameters/breakdown voltage: 8.89 V
Technical parameters/dissipated power: 1 kW
Technical parameters/clamp voltage: 13.6 V
Technical parameters/peak pulse power: 1000 W
Technical parameters/minimum reverse breakdown voltage: 8.89 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMB10J8.0A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 8V 1kW 2Pin SMB T/R
|
||
SMB10J8.0AHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 8V 1kW 2Pin SMB T/R
|
||
SMB10J8.0AHE3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 8V 1kW 2Pin SMB T/R
|
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