Technical parameters/number of pins: 2
Technical parameters/Maximum forward surge current (Ifsm): 700 A
Technical parameters/minimum reverse breakdown voltage: 11.1 V
Technical parameters/forward voltage (Max): 1.8 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-218AB
External dimensions/packaging: DO-218AB
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Lighting, Sensing and Instrumentation, Automotive, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SM8S10AHE3_A/I
|
VISHAY | 完全替代 | DO-218AB |
PAR® 瞬态电压抑制器表面安装单向 6600W,SM8A 和 SM8S 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
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