Technical parameters/polarity: NPN
Technical parameters/dissipated power: 4 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 2000 @1.5A, 4V
Technical parameters/rated power (Max): 4 W
Technical parameters/DC current gain (hFE): 6000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 40 MHz
Technical parameters/dissipated power (Max): 4000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 12
Encapsulation parameters/Encapsulation: SIP-12
External dimensions/packaging: SIP-12
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMA4032
|
Sanken Electric | 类似代替 | SIP-12 |
Darlington Array, Npn, 100V, Sip
|
||
SMA4032
|
Allegro MicroSystems | 类似代替 | SIP |
Darlington Array, Npn, 100V, Sip
|
||
SMA4032
|
SK Hynix | 类似代替 |
Darlington Array, Npn, 100V, Sip
|
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