Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 2000 @1A, 4V
Technical parameters/rated power (Max): 4 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 4000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 12
Encapsulation parameters/Encapsulation: SIP-12
External dimensions/packaging: SIP-12
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MA4033
|
Allegro MicroSystems | 功能相似 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA-12
|
|||
MA4033
|
Sanken Electric | 功能相似 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA-12
|
|||
SMA4033
|
Allegro MicroSystems | 功能相似 |
Quad High-Voltage, High-Current Darlington ArraysR
|
|||
SMA4033
|
Sanken Electric | 功能相似 | SIP-12 |
Quad High-Voltage, High-Current Darlington ArraysR
|
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