Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 10A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF632
|
Fairchild | 功能相似 | TO-220 |
N沟道功率MOSFET , 12A , 150至200 V N-Channel Power MOSFETs, 12A, 150-200 V
|
||
RFP2N18
|
Harris | 功能相似 | TO-220 |
N沟道 180V 2A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review