Technical parameters/number of channels: 1
Technical parameters/dissipated power: 5W (Ta), 27.7W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1300pF @15V(Vds)
Technical parameters/dissipated power (Max): 5W (Ta), 27.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR482DP-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 30V 35A PPAK SO-8
|
|||
SIR482DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
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