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Model SIR892DP-T1-GE3
Description SOIC-8 N-CH 25V 50A 3.4mΩ
Product QR code
Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
13.13  yuan 13.13yuan
5+:
$ 15.3644
50+:
$ 14.7078
200+:
$ 14.3401
500+:
$ 14.2482
1000+:
$ 14.1563
2500+:
$ 14.0512
5000+:
$ 13.9856
7500+:
$ 13.9199
Quantity
5+
50+
200+
500+
1000+
Price
$15.3644
$14.7078
$14.3401
$14.2482
$14.1563
Price $ 15.3644 $ 14.7078 $ 14.3401 $ 14.2482 $ 14.1563
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1050) Minimum order quantity(5)
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Technical parameters/drain source resistance: 3.4 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 5 W

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/Continuous drain current (Ids): 50A

Technical parameters/rise time: 18 ns

Technical parameters/reverse recovery time: 27 ns

Technical parameters/forward voltage (Max): 1.1 V

Technical parameters/Input capacitance (Ciss): 2645pF @10V(Vds)

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5000 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR888DP-T1-GE3 SIR888DP-T1-GE3 Vishay Semiconductor 类似代替
MOSFET N-CH 25V 40A PPAK SO-8
PDF
SIR888DP-T1-GE3 SIR888DP-T1-GE3 VISHAY 类似代替 SO-8
MOSFET N-CH 25V 40A PPAK SO-8
PDF

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