Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 22.2A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerPAK
External dimensions/packaging: PowerPAK
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR482DP-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 30V 35A PPAK SO-8
|
|||
SIR482DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
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