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Model SIHW30N60E-GE3
Description VISHAY SIHW30N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 25A, TO-247AD-3
Product QR code
Brand: Vishay Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
20.09  yuan 20.09yuan
5+:
$ 23.5006
50+:
$ 22.4963
200+:
$ 21.9339
500+:
$ 21.7933
1000+:
$ 21.6527
2500+:
$ 21.4920
5000+:
$ 21.3916
7500+:
$ 21.2912
Quantity
5+
50+
200+
500+
1000+
Price
$23.5006
$22.4963
$21.9339
$21.7933
$21.6527
Price $ 23.5006 $ 22.4963 $ 21.9339 $ 21.7933 $ 21.6527
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5829) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.104 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 250 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/rise time: 32 ns

Technical parameters/descent time: 36 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

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