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Model SIHP33N60EF-GE3
Description VISHAY SIHP33N60EF-GE3 Field effect transistor, MOSFET, N-channel, 600V, 33A, TO-220AB-3
Product QR code
Brand: Vishay Semiconductor
Packaging TO-220
Delivery time
Packaging method Tube
Standard packaging quantity 1
21.14  yuan 21.14yuan
5+:
$ 24.7338
50+:
$ 23.6768
200+:
$ 23.0849
500+:
$ 22.9369
1000+:
$ 22.7889
2500+:
$ 22.6198
5000+:
$ 22.5141
7500+:
$ 22.4084
Quantity
5+
50+
200+
500+
1000+
Price
$24.7338
$23.6768
$23.0849
$22.9369
$22.7889
Price $ 24.7338 $ 23.6768 $ 23.0849 $ 22.9369 $ 22.7889
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5014) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.085 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 278 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Input capacitance (Ciss): 3454pF @100V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 278 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/length: 10.52 mm

External dimensions/width: 4.7 mm

External dimensions/height: 15.85 mm

External dimensions/packaging: TO-220

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Lighting, Portable Devices, Alternative Energy, Communications & Networking, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

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