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Model SIHP28N60EF-GE3
Description N Channel MOSFET with fast diode, EF series, Vishay Semiconductor reduces reverse recovery time, reverse recovery charge, and reverse recovery current with low quality factor (FOM) and low input capacitance (Ciss). Due to the low reverse recovery charge, the robustness of the MOSFET transistor is improved with ultra-low gate charge (Qg), Vishay Semiconductor
Product QR code
Brand: VISHAY
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
20.92  yuan 20.92yuan
5+:
$ 24.4706
50+:
$ 23.4248
200+:
$ 22.8392
500+:
$ 22.6928
1000+:
$ 22.5464
2500+:
$ 22.3791
5000+:
$ 22.2745
7500+:
$ 22.1699
Quantity
5+
50+
200+
500+
1000+
Price
$24.4706
$23.4248
$22.8392
$22.6928
$22.5464
Price $ 24.4706 $ 23.4248 $ 22.8392 $ 22.6928 $ 22.5464
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6313) Minimum order quantity(5)
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Technical parameters/drain source resistance: 123 mΩ

Technical parameters/polarity: N-CH

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 28A

Technical parameters/rise time: 40 ns

Technical parameters/Input capacitance (Ciss): 2714pF @100V(Vds)

Technical parameters/descent time: 39 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 250 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.52 mm

External dimensions/width: 4.7 mm

External dimensions/height: 15.85 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tube

Other/Minimum Packaging: 50

Compliant with standards/RoHS standards: RoHS Compliant

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