Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.12 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/rise time: 84 ns
Technical parameters/Input capacitance (Ciss): 2740pF @10V(Vds)
Technical parameters/descent time: 69 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Portable Devices, Lighting, Computers & Computer Peripherals, Power Management, Communications & Networking, Motor Drive & Control, Industrial, Alternative Energy
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHB24N65E-E3
|
VISHAY | 完全替代 | TO-252-3 |
VISHAY SIHB24N65E-E3 Power MOSFET, N Channel, 24A, 650V, 0.12Ω, 10V, 2V
|
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