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Model SIHG17N60D-GE3
Description VISHAY SIHG17N60D-GE3 Power Field Effect Transistor, MOSFET, N-channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
11.34  yuan 11.34yuan
5+:
$ 13.2643
50+:
$ 12.6974
200+:
$ 12.3800
500+:
$ 12.3006
1000+:
$ 12.2213
2500+:
$ 12.1306
5000+:
$ 12.0739
7500+:
$ 12.0172
Quantity
5+
50+
200+
500+
1000+
Price
$13.2643
$12.6974
$12.3800
$12.3006
$12.2213
Price $ 13.2643 $ 12.6974 $ 12.3800 $ 12.3006 $ 12.2213
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8563) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.275 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 277.8 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/rise time: 56 ns

Technical parameters/Input capacitance (Ciss): 1780pF @10V(Vds)

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 277.8 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.87 mm

External dimensions/width: 5.31 mm

External dimensions/height: 20.82 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

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