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Model SIHB6N65E-GE3
Description Transistor, MOSFET, N-channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
Product QR code
Brand: VISHAY
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
6.65  yuan 6.65yuan
10+:
$ 7.9788
100+:
$ 7.5799
500+:
$ 7.3139
1000+:
$ 7.3006
2000+:
$ 7.2474
5000+:
$ 7.1809
7500+:
$ 7.1277
10000+:
$ 7.1011
Quantity
10+
100+
500+
1000+
2000+
Price
$7.9788
$7.5799
$7.3139
$7.3006
$7.2474
Price $ 7.9788 $ 7.5799 $ 7.3139 $ 7.3006 $ 7.2474
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1538) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.5 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 78 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/Continuous drain current (Ids): 7A

Technical parameters/rise time: 12 ns

Technical parameters/Input capacitance (Ciss): 820pF @100V(Vds)

Technical parameters/rated power (Max): 78 W

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 78000 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Active

Other/Minimum Packaging: 2000

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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