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Model SIE844DF-T1-E3
Description NChannel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET
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Brand: Vishay Semiconductor
Packaging PolarPAK-10
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5011) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.0058 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5.2 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 44.5 A

Technical parameters/rise time: 10.0 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 10

Encapsulation parameters/Encapsulation: PolarPAK-10

External dimensions/packaging: PolarPAK-10

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7658ADP-T1-GE3 SI7658ADP-T1-GE3 Vishay Siliconix 功能相似 SO-8
VISHAY SI7658ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
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