Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.32 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 33 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF12N60E-GE3
|
Vishay Siliconix | 完全替代 | TO-220-3 |
VISHAY SIHF12N60E-GE3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review