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Description VISHAY SIHF12N60E-E3 Power Field Effect Transistor, MOSFET, N-channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
Product QR code
Packaging TO-220
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.82  yuan 6.82yuan
10+:
$ 8.1888
100+:
$ 7.7794
500+:
$ 7.5064
1000+:
$ 7.4928
2000+:
$ 7.4382
5000+:
$ 7.3699
7500+:
$ 7.3153
10000+:
$ 7.2880
Quantity
10+
100+
500+
1000+
2000+
Price
$8.1888
$7.7794
$7.5064
$7.4928
$7.4382
Price $ 8.1888 $ 7.7794 $ 7.5064 $ 7.4928 $ 7.4382
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(9523) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.32 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 33 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHF12N60E-GE3 SIHF12N60E-GE3 Vishay Siliconix 完全替代 TO-220-3
VISHAY SIHF12N60E-GE3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
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