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Model SIHB6N65E-GE3
Description VISHAY SIHB6N65E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
8.37  yuan 8.37yuan
10+:
$ 10.0464
100+:
$ 9.5441
500+:
$ 9.2092
1000+:
$ 9.1925
2000+:
$ 9.1255
5000+:
$ 9.0418
7500+:
$ 8.9748
10000+:
$ 8.9413
Quantity
10+
100+
500+
1000+
2000+
Price
$10.0464
$9.5441
$9.2092
$9.1925
$9.1255
Price $ 10.0464 $ 9.5441 $ 9.2092 $ 9.1925 $ 9.1255
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5451) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.5 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 78 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/rise time: 12 ns

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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