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Model SIHD7N60E-GE3
Description VISHAY SIHD7N60E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-252
Delivery time
Packaging method Tube
Standard packaging quantity 1
9.38  yuan 9.38yuan
10+:
$ 11.2500
100+:
$ 10.6875
500+:
$ 10.3125
1000+:
$ 10.2938
2000+:
$ 10.2188
5000+:
$ 10.1250
7500+:
$ 10.0500
10000+:
$ 10.0125
Quantity
10+
100+
500+
1000+
2000+
Price
$11.2500
$10.6875
$10.3125
$10.2938
$10.2188
Price $ 11.2500 $ 10.6875 $ 10.3125 $ 10.2938 $ 10.2188
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7731) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.5 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 78 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Computers & Computer Peripherals, Portable Devices, Alternative Energy, Industrial, Motor Drive & Control, Lighting, Communications & Networking, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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