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Description VISHAY SIHB12N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 12A, TO-263-3
Product QR code
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
5.92  yuan 5.92yuan
10+:
$ 7.0980
100+:
$ 6.7431
500+:
$ 6.5065
1000+:
$ 6.4947
2000+:
$ 6.4474
5000+:
$ 6.3882
7500+:
$ 6.3409
10000+:
$ 6.3172
Quantity
10+
100+
500+
1000+
2000+
Price
$7.0980
$6.7431
$6.5065
$6.4947
$6.4474
Price $ 7.0980 $ 6.7431 $ 6.5065 $ 6.4947 $ 6.4474
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7886) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.32 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 147 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 650 V

Technical parameters/rise time: 19 ns

Technical parameters/Input capacitance (Ciss): 937pF @10V(Vds)

Technical parameters/descent time: 19 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 147 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Portable Devices, Lighting, Computers & Computer Peripherals, Power Management, Communications & Networking, Motor Drive & Control, Industrial, Alternative Energy

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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