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Model SIHB23N60E-GE3
Description VISHAY SIHB23N60E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 23 A, 600 V, 0.132 ohm, 10 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263
Delivery time
Packaging method Bulk
Standard packaging quantity 1
11.11  yuan 11.11yuan
5+:
$ 12.9999
50+:
$ 12.4443
200+:
$ 12.1332
500+:
$ 12.0554
1000+:
$ 11.9777
2500+:
$ 11.8888
5000+:
$ 11.8332
7500+:
$ 11.7777
Quantity
5+
50+
200+
500+
1000+
Price
$12.9999
$12.4443
$12.1332
$12.0554
$11.9777
Price $ 12.9999 $ 12.4443 $ 12.1332 $ 12.0554 $ 11.9777
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8123) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.132 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 227 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263

External dimensions/packaging: TO-263

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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