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Model SIE806DF-T1-GE3
Description MOSFET 30V 202A 125W 1.7mohm @ 10V
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Brand: Vishay Siliconix
Packaging PolarPAK-10
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4269) Minimum order quantity(1)
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Technical parameters/dissipated power: 5.2W (Ta), 125W (Tc)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 13000pF @15V(Vds)

Technical parameters/dissipated power (Max): 5.2W (Ta), 125W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: PolarPAK-10

External dimensions/packaging: PolarPAK-10

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIRA04DP-T1-GE3 SIRA04DP-T1-GE3 VISHAY 功能相似 PowerPAKSO-8
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8
PDF
SIRA04DP-T1-GE3 SIRA04DP-T1-GE3 Vishay Semiconductor 功能相似 SO-8
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8
PDF

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