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Model SIB914DK-T1-GE3
Description MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Product QR code
Brand: Vishay Siliconix
Packaging SC-75-6L
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.76  yuan 2.76yuan
5+:
$ 3.7274
25+:
$ 3.4513
50+:
$ 3.2580
100+:
$ 3.1752
500+:
$ 3.1199
2500+:
$ 3.0509
5000+:
$ 3.0233
10000+:
$ 2.9819
Quantity
5+
25+
50+
100+
500+
Price
$3.7274
$3.4513
$3.2580
$3.1752
$3.1199
Price $ 3.7274 $ 3.4513 $ 3.2580 $ 3.1752 $ 3.1199
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9117) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.09 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/threshold voltage: 800 mV

Technical parameters/drain source voltage (Vds): 8 V

Technical parameters/Continuous drain current (Ids): 1.50 A

Technical parameters/Input capacitance (Ciss): 125pF @4V(Vds)

Technical parameters/rated power (Max): 3.1 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-75-6L

External dimensions/packaging: SC-75-6L

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Intertechnology 类似代替 SC-75-6
VISHAY SIB912DK-T1-GE3 双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
PDF
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Siliconix 类似代替 SC-75-6L
VISHAY SIB912DK-T1-GE3 双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
PDF

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