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Model SIB914DK-T1-GE3
Description VISHAY SIB914DK-T1-GE3 Dual Field Effect Transistor, MOSFET, Dual N-channel, 1.5 A, 8 V, 0.09 ohm, 4.5 V, 800 mV
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Brand: Vishay Semiconductor
Packaging SC-75
Delivery time
Packaging method
Standard packaging quantity 1
1.29  yuan 1.29yuan
5+:
$ 1.7361
25+:
$ 1.6075
50+:
$ 1.5175
100+:
$ 1.4789
500+:
$ 1.4532
2500+:
$ 1.4210
5000+:
$ 1.4082
10000+:
$ 1.3889
Quantity
5+
25+
50+
100+
500+
Price
$1.7361
$1.6075
$1.5175
$1.4789
$1.4532
Price $ 1.7361 $ 1.6075 $ 1.5175 $ 1.4789 $ 1.4532
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3463) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.09 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/threshold voltage: 800 mV

Technical parameters/drain source voltage (Vds): 8 V

Technical parameters/Continuous drain current (Ids): 1.50 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-75

External dimensions/packaging: SC-75

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Intertechnology 类似代替 SC-75-6
VISHAY SIB912DK-T1-GE3 双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
PDF
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Siliconix 类似代替 SC-75-6L
VISHAY SIB912DK-T1-GE3 双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
PDF

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