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Model SIA519EDJ-T1-GE3
Description VISHAY SIA519EDJ-T1-GE3 Dual field-effect transistor, MOSFET, N and P channels, 4.5 A, 20 V, 0.053 ohm, 4.5 V, 600 mV
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Brand: Vishay Semiconductor
Packaging SC-70
Delivery time
Packaging method
Standard packaging quantity 1
1.21  yuan 1.21yuan
5+:
$ 1.6281
25+:
$ 1.5075
50+:
$ 1.4231
100+:
$ 1.3869
500+:
$ 1.3628
2500+:
$ 1.3326
5000+:
$ 1.3206
10000+:
$ 1.3025
Quantity
5+
25+
50+
100+
500+
Price
$1.6281
$1.5075
$1.4231
$1.3869
$1.3628
Price $ 1.6281 $ 1.5075 $ 1.4231 $ 1.3869 $ 1.3628
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2589) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.053 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 7.8 W

Technical parameters/threshold voltage: 600 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70

External dimensions/packaging: SC-70

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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