Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.0078 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.5 W
Technical parameters/threshold voltage: 350 mV
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/Continuous drain current (Ids): 12A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1508pF @4V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.5W (Ta), 19W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 1.7 mm
External dimensions/width: 1.7 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA414DJ-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
VISHAY SIA414DJ-T1-GE3 晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV
|
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