Technical parameters/dissipated power: 4.2W (Ta), 36W (Tc)
Technical parameters/Input capacitance (Ciss): 2000pF @20V(Vds)
Technical parameters/dissipated power (Max): 4.2W (Ta), 36W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7848BDP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAK SO |
Single N-Channel 40V 0.009Ω SMT TrenchFET Power Mosfet - PowerPAK SO-8
|
||
SI7848BDP-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
Single N-Channel 40V 0.009Ω SMT TrenchFET Power Mosfet - PowerPAK SO-8
|
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