Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0048 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 3.5 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 2300pF @20V(Vds)
Technical parameters/rated power (Max): 46 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 46 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4920EY-T1_GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET 2N-CH 30V 8A 8SO
|
||
SQ4920EY-T1_GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET 2N-CH 30V 8A 8SO
|
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