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Model SI7964DP-T1-E3
Description VISHAY SI7964DP-T1-E3 Dual MOSFET, Dual N Channel, 6.1A, 60V, 0.019Ω, 10V, 4.5V
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Brand: Vishay Semiconductor
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Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5943) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.019 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 1.4 W

Technical parameters/threshold voltage: 4.5 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 9.60 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7964DP-T1-GE3 SI7964DP-T1-GE3 Vishay Semiconductor 完全替代
MOSFET 2N-CH 60V 6.1A PPAK SO-8
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