Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1010pF @10V(Vds)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7980DP-T1-E3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET 2N-CH 20V 8A PPAK SO-8
|
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