Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rated power (Max): 1.4 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7288DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
N 通道 MOSFET,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI7958DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET DL N-CH 40V PPAK 8-SOIC
|
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