Technical parameters/drain source resistance: 0.013 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 11.3 A
Technical parameters/rise time: 17 ns
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7288DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
N 通道 MOSFET,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI7958DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET DL N-CH 40V PPAK 8-SOIC
|
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