Technical parameters/drain source resistance: 25.0 mΩ
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 7.70 A
Technical parameters/rated power (Max): 1.3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK-1212-8
External dimensions/length: 3.3 mm
External dimensions/width: 3.3 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: PowerPAK-1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7904BDN-T1-E3
|
Vishay Siliconix | 功能相似 | 1212-8 |
MOSFET 2N-CH 20V 6A 1212-8
|
||
SI7904BDN-T1-E3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
MOSFET 2N-CH 20V 6A 1212-8
|
||
SI7904BDN-T1-GE3
|
Vishay Siliconix | 功能相似 | 1212-8 |
Trans MOSFET N-CH 20V 6A 8Pin PowerPAK 1212 T/R
|
||
SI7904DN-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 20V 7.7A 2.8W 30mohm @ 4.5V
|
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