Technical parameters/drain source resistance: 195 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/rise time: 11 ns
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK-1212-8
External dimensions/packaging: PowerPAK-1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7922DN-T1-E3
|
Vishay Semiconductor | 完全替代 | 1212 |
SI7922DN-T1-E3 Dual N-channel MOSFET Module, 1.8A, 100V, 8Pin PowerPAK 1212
|
||
SIS902DN-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET 2N-CH 75V 4A PPAK 1212-8
|
|||
SIS902DN-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-1212-8 |
MOSFET 2N-CH 75V 4A PPAK 1212-8
|
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