Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Technical parameters/Input capacitance (Ciss): 3775pF @15V(Vds)
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7892BDP-T1-E3
|
Vishay Semiconductor | 功能相似 | PowerPAKSO-8 |
MOSFET N-CH 30V 15A PPAK SO-8
|
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