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Model SI7900AEDN-T1-E3
Description Dual N-Channel 20-V (D-S) MOSFET with common drain, Common Drain
Product QR code
Brand: Vishay Semiconductor
Packaging 1212
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4.56  yuan 4.56yuan
5+:
$ 6.1614
25+:
$ 5.7050
50+:
$ 5.3855
100+:
$ 5.2486
500+:
$ 5.1573
2500+:
$ 5.0432
5000+:
$ 4.9976
10000+:
$ 4.9291
Quantity
5+
25+
50+
100+
500+
Price
$6.1614
$5.7050
$5.3855
$5.2486
$5.1573
Price $ 6.1614 $ 5.7050 $ 5.3855 $ 5.2486 $ 5.1573
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8055) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.036 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 1.5 W

Technical parameters/threshold voltage: 900 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 8.50 A

Technical parameters/rise time: 1300 ns

Technical parameters/descent time: 4200 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1500 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: 1212

External dimensions/height: 1.04 mm

External dimensions/packaging: 1212

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7900AEDN-T1-GE3 SI7900AEDN-T1-GE3 Vishay Semiconductor 类似代替 1212
SI7900AEDN-T1-GE3 Dual N-channel MOSFETTransistor, 6A, 20V, 8Pin PowerPAK 1212
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