Technical parameters/drain source resistance: 0.004 Ω
Technical parameters/dissipated power: 83 W
Technical parameters/input capacitance: 5600pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 5600pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5.4W (Ta), 83W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5.99 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7880ADP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
Mosfet n-Ch 30V 40A Ppak So-8
|
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